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| Infrared Emitting Diode(GaAlAs) KEM5001R The KEM5001R is GaAlAs infrared emitting diode that is designed for high power, low forward voltage. at emission wavelength 870nm and has a high radiant efficiency over a wide range of forward current. 1.15 Dimensions [Unit : mm] This device is optimized for speed and efficiency 0.085 0.45 Features 0.70 3.700.1 870nm wavelength Low forward voltage 2.50 2.60 * PIN Description ANODE CATHODE High power and high reliability Available for pulse operating Surface Mountable Leadless Package Applications IR Audio and Telephone IR Communication Optical Switch Available for Wireless Digital Data Transmission Absolute Maximum Ratings Parameter Power Dissipation Forward Current Pulse Forward Current *1 Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature *2 *1. Duty ratio=1/100, pulse width=0.1ms *2. MAX 5sec [TA = 25 Symbol PD IF IFP VR Topr. Tstg. Tsol Rating 95 50 1 5 -25~+85 -25~+100 260 Unit mW mA A V ] 0.70 Electro-Optical Characteristics Parameter Forward Voltage Reverse Voltage Radiant intensity Peak Emission Wavelength Spectral Bandwidth 50% Half Angle Rise Time Symbol VF VR PO p Conditions IF=50 IR=10uA IF=50 IF=20 IF=20 IF=30mA IF=50mA Min. 4 13 Typ. 1.6 16 870 45 20 15 Max. 1.9 - [TA = 25 Unit. V V /sr nm nm deg. ns 2.300.1 0.80 ] 1/2 Tr -1- Infrared Emitting Diode(GaAlAs) KEM5001R Forward Current Vs Forward Voltage 80 110 100 90 80 70 60 50 40 30 20 10 0 0 1 2 Forward Voltage [V] Relative Intensity Vs Wavelength 1.2 1 Relative Intensity 0.8 0.6 0.4 0.2 0 600 700 800 900 1000 Wavelength [nm] 1100 Radiant Intensity Po [mW/Sr] 100 1000 3 Forward Current IF [mA] Forward Current IF [mA] 70 60 50 40 30 20 10 0 -20 0 20 40 60 80 100 Ambient Temperature Ta [] Forward Current Vs Ambient Temperature Radiant Intensity Vs Forward current 10 1 1 10 100 1000 Forward Current IF [mA] 10000 Radiant Angle Angle(deg.) 10000 Pulse Current Vs Duty Ratio [Pulse 100 Ta=25] Pulse Current [mA] 1000 100 10 0 1 10 Duty Ratio [%] 100 -2- |
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